Polarization anisotropy in the electroluminescence of m-plane InGaN-GaN multiple-quantum-well light-emitting diodes
Polarization anisotropy in the electroluminescence of m-plane InGaN-GaN multiple-quantum-well light-emitting diodes
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DOI：
10.1063/1.1875765
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发表时间：
2005-03-14
影响因子：
4
通讯作者：
Krames, MR
中科院分区：
文献类型：
--
作者：
Gardner, NF;Kim, JC;Krames, MR
在（10（1）over bar 0）m平面4 H-SiC衬底上生长的（10（1）over bar 0）m平面GaN薄膜上制备了InGaN-GaN多量子阱发光二极管。外延膜的[0001]轴平行于衬底的[0001]轴。表面是条纹状的，具有垂直于c轴的特征，最大表面高度差为45 nm。电致发光显示出强的偏振各向异性，与平行于c轴的偏振相比，垂直于c轴的偏振发射的光多7倍。的极化比的Ahrrenius拟合表明，有一个49毫电子伏的两个极化状态之间的能隙的差异。这表明，在高功率发光二极管应用所需的高温（>150摄氏度）和驱动电流密度下可以保持高偏振比。(C)2005年美国物理学会。
InGaN-GaN multiple-quantum-well light-emitting diodes were fabricated on (10 (1) over bar0) m plane GaN films grown on (10 (1) over bar0) m plane 4H-SiC substrates. The [0001] axis of the epitaxial film is parallel to the [0001] axis of the substrate. The surface is striated, with features running perpendicular to the c axis and a maximum surface height difference of 45 nm. Electroluminescence shows strong polarization anisotropy, with 7x more light emitted with polarization perpendicular to the c axis compared to parallel to the c axis. An Ahrrenius fit of the polarization ratio indicates that there is a 49 meV difference in the energy gap between the two polarization states. This suggests that a high polarization ratio can be maintained at the high temperatures (>150 degrees C) and drive current densities required for high-power light-emitting diode applications. (C) 2005 American Institute of Physics.