Bulk-like pentacene epitaxial films on hydrogen-terminated Si(111)
Bulk-like pentacene epitaxial films on hydrogen-terminated Si(111)
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DOI：
10.1063/1.2008371
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发表时间：
2005-08
影响因子：
4
通讯作者：
T. Shimada;H. Nogawa;T. Hasegawa;R. Okada;H. Ichikawa;K. Ueno;K. Saiki
中科院分区：
文献类型：
--
作者：
T. Shimada;H. Nogawa;T. Hasegawa;R. Okada;H. Ichikawa;K. Ueno;K. Saiki
报道了并五苯在氢封端的 Si(111) 上的外延生长。反射高能电子衍射（RHEED）显示，即使单层厚度下，晶体堆积也与块体晶体中的堆积相似，但在多层中仍保持单层厚度。通过原子力显微镜（AFM）可以清楚地观察到成熟效应。这些结果对于获得并五苯与硅微器件结合并具有降低的缺陷密度的定向晶体薄膜非常重要。
The epitaxial growth of pentacene on hydrogen-terminated Si(111) is reported. Reflection high energy electron diffraction (RHEED) revealed that the crystal packing resembles that in the bulk crystal even at a monolayer thickness, which was maintained in multilayers. A ripening effect was clearly observed by atomic force microscopy (AFM). These results are important to obtain oriented crystalline films of pentacene combined with silicon microdevices with reduced defect densities.