One‐step electroless synthesis and properties of copper film deposited on silicon substrate
One‐step electroless synthesis and properties of copper film deposited on silicon substrate
复制标题
硅基铜薄膜的一步化学合成及其性能
DOI：
10.1002/pssa.200723305
复制
发表时间：
2008
期刊：
影响因子：
--
通讯作者：
P. Chen
中科院分区：
文献类型：
--
作者：
Jing Ye;Qianwang Chen;Y. Xiong;Y. Chai;P. Chen
A one‐step electroless deposition method was developed to synthesize sponge‐like copper film with favourable mechanical adhesion on silicon substrate. X‐ray diffraction and X‐ray photoelectron spectroscopy analysis and field emission scanning electron microscopy observations indicate that the as‐prepared copper film is polycrystalline and composed of copper nanoparticles with a diameter ranging from 45 nm to 60 nm, the thickness of the film being approximately 2 μm. Hydrogen obtained through the reaction of sodium hydroxide and silicon in ethylene glycol solution was employed to reduce in situ the copper ions to form metal copper films on the silicon substrate. The electrical and mechanical properties of the as‐prepared copper film were measured. The results show that the as‐prepared copper film possesses high resistivity and low Young's modulus due to its special structure. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
影响因子：
3.2
作者：
Lim, J. -W.;Isshiki, M.
通讯作者：
Isshiki, M.