Investigation of point and extended defects in electron irradiated silicon—Dependence on the particle energy
Investigation of point and extended defects in electron irradiated silicon—Dependence on the particle energy
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DOI：
10.1063/1.4918924
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发表时间：
2015-04
影响因子：
3.2
通讯作者：
R. Radu;I. Pintilie;L. Nistor;E. Fretwurst;G. Lindstroem;L. Makarenko
中科院分区：
文献类型：
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作者：
R. Radu;I. Pintilie;L. Nistor;E. Fretwurst;G. Lindstroem;L. Makarenko
本研究的重点是辐射诱发的有源缺陷对硅二极管电性能的影响。用1.5 MeV到27 MeV的电子辐照n型硅二极管。结果表明，在1.5 MeV的高通量电子辐照后，小团簇的形成已经开始。随着能量的增加，点缺陷和小簇的引入率都增加了，在电子能量高于~ 15 MeV时显示出饱和。在低辐照通量值下，泄漏电流的变化被证明是由三空位（V3）结构的变化决定的。与V3类似，其他与团簇相关的缺陷也显示出双稳定性，这表明它们可能与较大的空位团簇有关。考虑到辐射诱导的俘获中心，充分描述了辐照后空间电荷密度随辐照和退火时间的变化。高分辨率…
This work is focusing on generation, time evolution, and impact on the electrical performance of silicon diodes impaired by radiation induced active defects. n-type silicon diodes had been irradiated with electrons ranging from 1.5 MeV to 27 MeV. It is shown that the formation of small clusters starts already after irradiation with high fluence of 1.5 MeV electrons. An increase of the introduction rates of both point defects and small clusters with increasing energy is seen, showing saturation for electron energies above ∼15 MeV. The changes in the leakage current at low irradiation fluence-values proved to be determined by the change in the configuration of the tri-vacancy (V3). Similar to V3, other cluster related defects are showing bistability indicating that they might be associated with larger vacancy clusters. The change of the space charge density with irradiation and with annealing time after irradiation is fully described by accounting for the radiation induced trapping centers. High resolution ...