Temperature‐mediated phase selection during growth of GaN on (111)A and (1̄1̄1̄)B GaAs substrates
Temperature‐mediated phase selection during growth of GaN on (111)A and (1̄1̄1̄)B GaAs substrates
复制标题
(111)A 和 (1̄1̄1̄)B GaAs 衬底上 GaN 生长过程中温度介导的相选择
DOI：
10.1063/1.115374
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发表时间：
1995
影响因子：
4
通讯作者：
S. Mahajan
中科院分区：
文献类型：
--
作者：
J. Yang;J. N. Kuznia;Qin;M. Khan;T. George;M. Graef;S. Mahajan
通过改变生长温度，可以在（111）A和（111）B GaAs衬底上选择性地沉积具有锌尖晶石和纤锌矿结构的GaN层。使用生长温度作为变量，具有两种结构的层已经被顺序地沉积。已通过横截面高分辨率电子显微镜检查了生长结构。结果表明，两相一旦形成，在所研究的温度范围内是结构稳定的。此外，从GaN（锌尖晶石）到GaN（纤锌矿）的转变是尖锐的，而在反向转变期间观察到故障区域。已经提出了一些论点来使这些意见合理化。
GaN layers having the zinc blende and wurtzite structures can be selectively deposited on (111)A and (111)B GaAs substrates by varying the growth temperature. Using the growth temperature as a variable, layers having the two structures have been sequentially deposited. The as‐grown structures have been examined by cross‐sectional high resolution electron microscopy. Results indicate that the two phases once formed are structurally stable in the temperature range examined. Furthermore, the transition from GaN (zinc blende) to GaN (wurtzite) is sharp, whereas a faulted region is observed during the reverse transition. Arguments have been developed to rationalize these observations.