Cathodoluminescence of crystalline and amorphous SiO2 and GeO2
Cathodoluminescence of crystalline and amorphous SiO2 and GeO2
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DOI：
10.1016/s0022-3093(00)00348-3
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发表时间：
2001
影响因子：
3.5
通讯作者：
H. Fitting;T. Barfels;A. Trukhin;B. Schmidt
中科院分区：
文献类型：
--
作者：
H. Fitting;T. Barfels;A. Trukhin;B. Schmidt
研究了不同晶型和非晶型改性sio2和geo2以及掺锗sio2层的阴极发光（CL）及其温度-剂量行为。晶体样品包括六方石英和类石英晶体中的四重配位Si和Ge，以及四方金红石晶体中的六重配位原子。检测到的发光带一般归属于三个光学主动发光中心：双配位硅（=Si:）和锗（=Ge:）中心，非桥氧空穴中心（NBOHC）和自捕获激子（STE）。第一类是氧缺陷中心（ODC），在金红石状四方晶体和玻璃态晶体中都特别发达。在注入锗的sio2层中，巨大的紫色发光归因于二氧化硅基体中的双重配位锗。
Cathodoluminescence (CL) and its temperature-dose behaviour are presented for different crystalline and amorphous modifications of SiO2and GeO2as well as for Ge-doped SiO2layers. The crystalline samples include four-fold coordinated Si and Ge in hexagonal quartz and quartz-like crystals, respectively, as well six-fold coordinated atoms in tetragonal rutile-like crystals. The detected luminescence bands, in general, are attributed to three optical active luminescence centres: the two-fold coordinated silicon (=Si:) and germanium (=Ge:) centre, respectively, the non-bridging oxygen hole centre (NBOHC) and the self trapped exciton (STE). The first ones, the oxygen deficient centres (ODC), are especially developed in both, in the tetragonal crystal rutile-like modifications as well as in glassy states. The huge violet luminescence in Ge-implanted SiO2-layers is attributed to the two-fold coordinated Ge in the silica matrix.