InsituformationofhafniumsilicateonSisubstratebyatomiclayerdepositionwithtetrakis(dimethylamino)hafniumandmicrowave-generatedatomicoxygen

InsituformationofhafniumsilicateonSisubstratebyatomiclayerdepositionwithtetrakis(dimethylamino)hafniumandmicrowave-generatedatomicoxygen
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用四(二甲氨基)铪和微波产生的原子氧进行原子层沉积在硅衬底上原位形成硅酸铪

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发表时间:
2013
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通讯作者:
H.Ishizaki,Y.Otani,C.Yamamoto,J.Yamanaka,T.Sato,T.Takamatsu,andY.Fukuda
H.Ishizaki,Y.Otani,C.Yamamoto,J.Yamanaka,T.Sato,T.Takamatsu,andY.Fukuda
中科院分区:
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文献类型:
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作者:
W. Li;E. C. Meng;T. Matsushita;S. Oda;D. Ishikawa;K. Nakane;H. Tatsuoka;H.Ishizaki,Y.Otani,C.Yamamoto,J.Yamanaka,T.Sato,T.Takamatsu,andY.Fukuda

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