Luminescence of Native Defects in Zn2GeO4
Luminescence of Native Defects in Zn2GeO4
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DOI：
10.1149/1.2720769
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发表时间：
2007-06
影响因子：
3.9
通讯作者：
Zhongshi Liu;X. Jing;Lingxuan Wang
中科院分区：
文献类型：
--
作者：
Zhongshi Liu;X. Jing;Lingxuan Wang
采用固相反应法制备了纯相Zn 2 GeO 4，并在不同气氛（O2、空气、N2、真空、Zn和Ge）中对产物进行了退火。该材料是呈现白色-蓝色发射的天然缺陷磷光体，并且其光致发光比商业ZnO磷光体的光致发光亮约40%。电子顺磁共振（EPR）测量表明存在Zn;（或Zn +），Zn的异常价态。此外，还用EPR检测到Vo、Vzn和电离的VGe。提出了这种本征缺陷磷光体的发光模型，它可能是由于施主（Vo和Zn）和受主（V' Zn和电离的V Ge）之间的复合引起的。
Pure phase Zn 2 GeO 4 was fabricated by solid state reactions and the products were annealed in various atmospheres, such as O 2 , air, N 2 , vacuum, Zn, and Ge. The material was a native defect phosphor presenting white-bluish emission and its photoluminescence was about 40% brighter than that of the commercial ZnO phosphor. The electron paramagnetic resonance (EPR) measurements showed the existence of Zn; (or Zn + ), an abnormal valence for Zn. Additionally, V o , V zn, and ionized V Ge were also detected by EPR. The model for the luminescent emission of this native defect phosphor was proposed, which may arise from the recombination between the donors (V o and Zn,) and the acceptors (V' zn and ionized V Ge ).