A defect-tolerant memory architecture for molecular electronics
A defect-tolerant memory architecture for molecular electronics
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DOI：
10.1109/nano.2003.1231012
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发表时间：
2004
影响因子：
2.4
通讯作者：
Myung-Hyun Lee;Young Kwan Kim;Yoon-Hwa Choi
中科院分区：
文献类型：
--
作者：
Myung-Hyun Lee;Young Kwan Kim;Yoon-Hwa Choi
提出了一种用于分子电子学的容错存储器结构。一个交叉结构，其中分子夹在纳米线之间，被用来作为一个模型，以实现分子存储器，并实现缺陷容限。在逻辑电路寻址存储器的缺陷也被考虑在内。通过计算机模拟来估计形成功能存储器的备用行和列的数量，以用于缺陷率和存储器大小的各种值。
This paper presents a defect-tolerant memory architecture for molecular electronics. A crossbar structure, where molecules are sandwiched between nanowires, is used as a model to realize molecular memory and to achieve defect tolerance. Defects in the logic circuits for addressing memory are also taken into account. The number of spare rows and columns to form a functioning memory is estimated by computer simulation for various values of defect rate and memory size.