Characterization of planar semipolar gallium nitride films on spinel substrates
Characterization of planar semipolar gallium nitride films on spinel substrates
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DOI：
10.1143/jjap.44.l920
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发表时间：
2005-01-01
期刊：
影响因子：
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通讯作者：
Nakamura, S
中科院分区：
文献类型：
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作者：
Baker, TJ;Haskell, BA;Nakamura, S
利用氢化物气相外延法生长出镜面、平面半极性氮化镓薄膜。这是第一份高质量的半极性氮化镓薄膜可用于器件生长的报告。在（100）MgAl2O4尖晶石上生长了（1011）GaN的平面膜，在（110）MgAl2O4尖晶石上生长了（10 (13)over bar）GaN的平面膜。（10 (11) / bar）GaN在（100）尖晶石上的平面外延关系为[10 (12)/ bar]（GaN）垂线垂线[011]（尖晶石）和[1 (2)/ bar 10]（GaN）垂线垂线[0 (1)/ bar1]（尖晶石）。（10 (13) / bar）GaN在（110）尖晶石上的平面外延关系为[30 (32)/ bar]（GaN）垂直面bar[001]（尖晶石）和[1 (2)/ bar 10]（GaN）垂直面bar [(1) / bar0]（尖晶石）。
Specular, planar semipolar gallium nitride films were grown by hydride vapor phase epitaxy. This is the first report of high quality semipolar GaN films that could be used for device growth. Planar films of (1011)GaN have been grown on (100)MgAl2O4 spinel, and planar films of (10 (13) over bar )GaN have been grown on (110)MgAl2O4 spinet. The in-plane epitaxial relationship for (10 (11) over bar )GaN on (100) spinet was [10 (12) over bar](GaN) vertical bar vertical bar [011](spinel) and [1 (2) over bar 10](GaN) vertical bar vertical bar [0 (1) over bar1](spinel). The in-plane epitaxial relationship for (10 (13) over bar )GaN on (110) spinel was [30 (32) over bar](GaN) vertical bar vertical bar [001](spinel) and [1 (2) over bar 10](GaN) vertical bar vertical bar [(1) over bar0](spinel).