Effect of Arsenic Source on Electron Trap Concentrations in MBE-Grown Al0.2Ga0.8As
Effect of Arsenic Source on Electron Trap Concentrations in MBE-Grown Al0.2Ga0.8As
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砷源对 MBE 生长的 Al0.2Ga0.8As 电子陷阱浓度的影响
DOI：
10.1143/jjap.24.1324
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发表时间：
1985
影响因子：
1.5
通讯作者：
M. Ishii
中科院分区：
文献类型：
--
作者：
S. Naritsuka;K. Yamanaka;M. Mannoh;M. Mihara;M. Ishii
通过深能级瞬态光谱研究了分子束外延 (MBE) 生长的 n-Al0.2Ga0.8As 层中的电子陷阱。当比较顺序生长的层时，发现两个主要陷阱能级 ME5（活化能 0.63 eV）和 ME6（0.71 eV）的浓度随着生长运行次数显着降低。陷阱浓度还敏感地取决于砷源材料的选择。这些结果表明，陷阱与砷材料中的挥发性杂质密切相关。
Electron traps in n-Al0.2Ga0.8As layers grown by molecular beam epitaxy (MBE) have been studied by deep level transient spectroscopy. When compared among the layers grown sequentially, the concentrations of the two dominant trap levels, ME5 (activation energy 0.63 eV) and ME6 (0.71 eV), are found to decrease markedly with the growth run number. The trap concentrations also depend sensitively on the choice of arsenic source material. These results show that the traps are closely associated with volatile impurities in arsenic materials.