Interlayer Coupling Induced Infrared Response in WS2/MoS2 Heterostructures Enhanced by Surface Plasmon Resonance
Interlayer Coupling Induced Infrared Response in WS2/MoS2 Heterostructures Enhanced by Surface Plasmon Resonance
复制标题
表面等离子共振增强 WS2/MoS2 异质结构中的层间耦合诱导红外响应
DOI：
10.1002/adfm.201800339
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发表时间：
2018
影响因子：
19
通讯作者：
Zhai TY
中科院分区：
文献类型：
--
作者：
Wang Guichao;Li Liang;Wang Renyan;Zhou Shasha;Gan Lin;Zhai Tianyou;Fan Weihao;Lue Jing-Tao;Gan L;Zhai TY
红外光探测一般受到半导体固有带隙的限制，这抑制了红外光探测器设计的自由度，阻碍了高性能红外光探测器的发展。本工作首次基于WS2/MoS2异质结制备了红外(1030 Nm)光电探测器。单独的WS2和MoS2对红外线没有反应。WS2/MoS2的红外光响应来源于强烈的层间耦合，这使得异质结区的能量间隔变小，从而使异质结具有比单个组分更长的波长探测能力。考虑到少数几层WS2/MoS2异质结的间接带隙本质导致的低吸光特性，其红外响应度进一步提高，最高可达≈的25倍，但通过表面等离子体共振保持了较快的响应率。这种层间耦合诱导的红外光响应和表面等离子体共振增强策略为设计具有无限自由度的高性能红外光探测器铺平了道路。
Infrared light detection is generally limited by the intrinsic bandgap of semiconductors, which suppresses the freedom in infrared light photodetector design and hinders the development of high‐performance infrared light photodetector. In this work, for the first time infrared light (1030 nm) photodetectors are fabricated based on WS2/MoS2heterostructures. Individual WS2and MoS2have no response to infrared light. The origin of infrared light response for WS2/MoS2comes from the strong interlayer coupling which shrinks the energy interval in the heterojunction area thus rendering heterostructures longer wavelength detection ability compared to individual components. Considering the low light absorption due to indirect bandgap essence of few layers WS2/MoS2heterostructures, its infrared responsivity is further enhanced with at most ≈25 times but the fast response rate is maintained via surface plasmon resonance (SPR). Such an interlayer coupling induced infrared light response and surface plasmon resonance enhancement strategy paves the way for high‐performance infrared light photodetection of infinite freedom in design.