Influence of image and exchange-correlation effects on electron transport in nanoscale DG MOSFETs
Influence of image and exchange-correlation effects on electron transport in nanoscale DG MOSFETs
复制标题
图像和交换相关效应对纳米级 DG MOSFET 中电子传输的影响
DOI：
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发表时间：
2005
影响因子：
3.1
通讯作者：
T. Ohzone
中科院分区：
文献类型：
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作者：
H. Iwata;T. Matsuda;T. Ohzone
采用非平衡绿色函数方法研究了镜像和多体交换关联效应对纳米双栅MOSFET电子输运的影响。对金属栅和多晶硅栅MOSFET进行了模拟。当栅极材料是金属时，镜像和交换相关效应的包含增加了计算的漏极电流，特别是在高栅极电压下。在多晶硅栅极的情况下，计算出的漏极电流在高栅极电压下几乎保持不变，因为这两种影响抵消了。然而，在低栅极电压下，漏极电流通过包括这些效应而减小。在这项研究中，波函数渗透到栅氧化层和栅电极也被考虑在内。在低栅压下，考虑穿透效应和不考虑穿透效应的漏极电流计算结果存在明显差异。此外，通过包括该效应，每个谷型的电子占有率显著改变。
The impact of image and many-body exchange-correlation effects on electron transport has been investigated for nanoscale double-gate MOSFETs, using the nonequilibrium Green function method. The simulations have been performed for metal gate and polysilicon gate MOSFETs. When the gate material is metal, the inclusion of image and exchange-correlation effects increases the computed drain current, particularly at high gate voltages. In the case of polysilicon gate, the computed drain current remains almost unchanged at high gate voltages because both effects cancel out. However, at low gate voltages, the drain current is decreased by including these effects. In this study, the wavefunction penetration into the gate oxide and gate electrode has also been taken into account. Clear discrepancies between the drain currents calculated with and without considering the penetration effect can be found at low gate voltages. Further, the electron occupancy of each valley type is markedly changed by including this effect.