Lifetimes of hydrogen and deuterium related vibrational modes in silicon.
Lifetimes of hydrogen and deuterium related vibrational modes in silicon.
复制标题
硅中氢和氘相关振动模式的寿命。
DOI：
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发表时间：
2001
影响因子：
8.6
通讯作者：
M. Stavola
中科院分区：
文献类型：
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作者：
M. Budde;G. Lüpke;E. Chen;X. Zhang;N. Tolk;L. Feldman;E. Tarhan;A. Ramdas;M. Stavola
用高分辨红外吸收光谱和瞬态漂白光谱测量了硅中氢和氘相关伸缩模的寿命。寿命被发现是非常依赖于缺陷结构，范围从2到295 ps。与传统智慧相反，我们发现Si-D模式的寿命通常比相应的Si-H模式的寿命长。电子器件退化的物理结果的潜在影响进行了讨论。
Lifetimes of hydrogen and deuterium related stretch modes in Si are measured by high-resolution infrared absorption spectroscopy and transient bleaching spectroscopy. The lifetimes are found to be extremely dependent on the defect structure, ranging from 2 to 295 ps. Against conventional wisdom, we find that lifetimes of Si-D modes typically are longer than for the corresponding Si-H modes. The potential implications of the results on the physics of electronic device degradation are discussed.