Rocksalt CeO epitaxial thin film as a heavy-fermion system transiting from p-type metal to partially compensated n-type metal by 4f delocalization
Rocksalt CeO epitaxial thin film as a heavy-fermion system transiting from p-type metal to partially compensated n-type metal by 4f delocalization
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DOI：
10.1103/physrevb.106.125106
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发表时间：
2022-09-06
影响因子：
3.7
通讯作者：
Fukumura, Tomoteru
中科院分区：
文献类型：
--
作者：
Abe, Nobuto;Oka, Daichi;Fukumura, Tomoteru
制备了岩盐CeO(001)外延薄膜，并对其电学性质进行了研究。X射线光电子能谱和吸收光谱证实了CeO中存在简单的4f15d1电子构型和4f5d杂化。在高温下，5d导电空穴主导金属导电，但在10K以下出现部分补偿的n型导电，其电阻率迅速下降，对应于费米液态。在2K下，空穴迁移率高达646cm2 V-1 S-1，而电子迁移率在20年内较低，分别反映了5d和4f带的大的和小的色散。在0.8K时，作为近藤效应的一种表现形式，出现了一个电阻率极小值，表明了局部4f局域化。这些结果表明，与其他反铁磁性Ce硫属化合物不同，4f-5d杂化在Ce-Ce离子间距离较短的Ce中诱导了Kondo相干态。
Rocksalt CeO (001) epitaxial thin films were synthesized and their electronic properties were investigated. A simple 4 f15d1electronic configuration with 4 f -5d hybridization in CeO was confirmed by x-ray photoemission and absorption spectroscopy. While 5d conduction holes governed the metallic conduction at high temperatures, a partially compensated n-type conduction appeared below similar to 10 K with a rapid decrease in resistivity correspond-ing to a Fermi liquid state. The hole mobility was as high as 646 cm2 V-1 s-1 at 2 K in contrast to the two decades lower electron mobility, reflecting the large and small dispersion of 5d and 4 f bands, respectively. At 0.8 K, a resistivity minimum was observed as a manifestation of the Kondo effect, indicating partial 4 f localization. These results represented that the significant 4 f-5d hybridization induced a Kondo coherent state in CeO with a short Ce-Ce interionic distance unlike the other antiferromagnetic Ce chalcogenides.