Simulation Study of Resistor Networks Applied to an Array of 256 SiPMs
Simulation Study of Resistor Networks Applied to an Array of 256 SiPMs
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DOI：
10.1109/tns.2012.2226051
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发表时间：
2013-04-01
影响因子：
1.8
通讯作者：
Benlloch, Jose M.
中科院分区：
文献类型：
--
作者：
Gonzalez, Antonio J.;Moreno, Manuel;Benlloch, Jose M.
在这项工作中，我们描述了一种减少由 256 个硅光电倍增管 (SiPM) 阵列检测到的信号数量的过程，使用电阻网络将信号电荷分成几个读出通道。对几种配置进行了建模，并对读出触点处的脉冲信号进行了模拟。这些模拟结果在一组专门设计和制造的印刷电路板上进行了实验测试。对三种网络配置进行了建模。该模型为所有三种配置提供了令人鼓舞的结果。然而，为本研究构建的原型的测量结果仅为其中一种网络配置提供了有用的位置敏感性。网络中缺乏输入信号放大、SiPM 暗电流以及具有寄生电容的八层板的复杂性可能导致解析碰撞光子位置的性能下降。这是外部印刷电路板和元件很难克服的。
In this work we describe a procedure to reduce the number of signals detected by an array of 256 Silicon Photomultipliers (SiPMs) using a resistor network to divide the signal charge into few readout channels. Several configurations were modeled, and the pulsed signal at the readout contacts were simulated. These simulation results were experimentally tested on a specifically designed and manufactured set of printed circuit boards. Three network configurations were modeled. The modeling provided encouraging results for all three configurations. The measurements on the prototypes constructed for this study, however, provided useful position-sensitivity for only one of the network configurations. The lack of input signal amplification into the networks, the SiPM dark current, as well as the complexity of an eight layers board with parasitic capacitances, could have caused the degradation of resolving the impact photon position. This is hard to overcome with external printed circuit boards and components.