Semimetal–Monolayer Transition Metal Dichalcogenides Photodetectors for Wafer‐Scale Broadband Photonics
Semimetal–Monolayer Transition Metal Dichalcogenides Photodetectors for Wafer‐Scale Broadband Photonics
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DOI：
10.1002/adpr.202300029
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发表时间：
2023-01
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影响因子：
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通讯作者：
Hon-Loen Sinn;Aravindh Kumar;E. Pop;A. Newaz
中科院分区：
文献类型：
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作者：
Hon-Loen Sinn;Aravindh Kumar;E. Pop;A. Newaz
原子薄的二维过渡金属二卤化物(TMD)，如MoS_2，由于强烈的光-物质相互作用，有望成为纳米级光子学的候选材料。然而，由于金属-单分子层(1L)-MoS_2界面上的金属诱导能带态(MIG)的费米能级钉扎，限制了基于传统金属的高接触电阻光电子器件的应用。另一方面，半金属-TMD-半金属器件可以克服这一限制，其中MIG被充分抑制，允许欧姆接触。在这里，我们展示了一种具有欧姆电接触和非凡的光电性能的铋-1L-MoS_2-铋器件的光电性能。为了解决晶圆规模的生产，全覆盖1L-MoS_2由化学气相沉积生长。在77K下测量了300A W−1在400 nm波长下的高响应度，换算成外量子效率(EQE)≈1000或105%。在77K下，器件的90%上升时间为0.1ms，表明它们可以工作在≈10 kHz的速度。介绍了一种光谱覆盖范围从380 nm到1000 nm的高性能宽带光电探测器。大规模阵列器件的制造、高灵敏度和高速响应的结合为包括集成光电子电路在内的光子学提供了巨大的应用潜力。
Atomically thin 2D transition metal dichalcogenides (TMDs), such as MoS2, are promising candidates for nanoscale photonics because of strong light–matter interactions. However, Fermi‐level pinning due to metal‐induced gap states (MIGS) at the metal–monolayer (1L)‐MoS2 interface limits the application of optoelectronic devices based on conventional metals due to high contact resistance. On the other hand, a semimetal–TMD–semimetal device can overcome this limitation, where the MIGS are sufficiently suppressed allowing ohmic contacts. Herein, the optoelectronic performance of a bismuth–1L‐MoS2–bismuth device with ohmic electrical contacts and extraordinary optoelectronic properties is demonstrated. To address the wafer‐scale production, full coverage 1L‐MoS2 grown by chemical vapor deposition. High photoresponsivity of 300 A W−1 at wavelength 400 nm measured at 77 K, which translates into an external quantum efficiency (EQE) ≈1000 or 105%, is measured. The 90% rise time of the devices at 77 K is 0.1 ms, suggesting they can operate at the speed of ≈10 kHz. High‐performance broadband photodetector with spectral coverage ranging from 380 to 1000 nm is demonstrated. The combination of large‐array device fabrication, high sensitivity, and high‐speed response offers great potential for applications in photonics, including integrated optoelectronic circuits.