Anomalous Hall effect of MnBi films with perpendicular magnetic anisotropy
Anomalous Hall effect of MnBi films with perpendicular magnetic anisotropy
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DOI：
10.1016/j.jallcom.2019.153080
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发表时间：
2020-04
影响因子：
6.2
通讯作者：
M. Tang;Qingyao Wang;S. M. Zhou;W. Fan;X. Qiu
中科院分区：
文献类型：
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作者：
M. Tang;Qingyao Wang;S. M. Zhou;W. Fan;X. Qiu
采用直流磁控溅射法在玻璃衬底上制备了一系列不同Mn原子浓度（x）的MnBi薄膜。晶体结构，磁性，和反常霍尔效应（AHE）作为x的函数进行了研究。的非单调性变化的函数x，并达到最小值时，x= 0.60。MnBi薄膜的剩余电阻率在x= 0.60时也有一个最小值。在AHE中的声子诱导的斜散射参数是负的，并且随着x的增加而增加，而剩余电阻率诱导的斜散射参数将符号从正变为负。散射无关参数B为正，并随x的增大而增大。AHE行为可以归因于微观结构随x的演变。
A series of MnBi films with different Mn atomic concentrations (x) are fabricated by DC magnetron sputtering on glass substrates. The crystalline structure, the magnetic properties, and the anomalous Hall effect (AHE) are investigated as a function of x. The coercivity is found to change non-monotonically as a function of x and achieves a minimum value when x= 0.60. The residual resistivity of MnBi films also has a minimum at x= 0.60. The phonon induced skew scattering parameter in the AHE is negative and increases in magnitude with increasing x while the residual resistivity induced skew scattering parameter changes the sign from positive to negative. The scattering independent parameter b is positive and increases with increasing x. The AHE behavior can be attributed to the evolution of the microstructure with x.