Improvement of SiO$_{\bf 2}$ Properties by Heating Treatment in High Pressure H$_{\bf 2}$O Vapor
Improvement of SiO$_{\bf 2}$ Properties by Heating Treatment in High Pressure H$_{\bf 2}$O Vapor
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通过高压 H$_{f 2}$O 蒸气热处理改善 SiO$_{f 2}$ 性能
DOI：
10.1143/jjap.36.l687
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发表时间：
1997
影响因子：
1.5
通讯作者：
M. Satoh
中科院分区：
文献类型：
--
作者：
T. Sameshima;M. Satoh
通过270℃高压水蒸气加热，提高了等离子体化学气相沉积SiO2和SiO2/Si界面的性能。当水蒸汽压增加到54 bar时，固定氧化物电荷密度从初始的2.5×1012 cm-2降低到8×1010 cm-2。经54 bar水蒸汽处理后，Si-O反对称伸缩振动模式引起的吸收带峰值频率由处理前的1062 cm-1提高到1078 cm-1。吸收带半峰全宽度减小到65 cm-1。
Properties of SiO2 and SiO2/Si interfaces formed by plasma chemical vapor deposition were improved by heating at 270°C in high pressure H2O vapor. The treatment reduced the fixed oxide charge density from 2.5×1012 cm-2 (initial) to 8×1010 cm-2 as the H2O vapor pressure increased to 54 bar. The peak frequency of the absorption band caused by the Si-O antisymmetric stretching vibration mode was increased to 1078 cm-1 for treatment with 54 bar H2O vapor, while it was 1062 cm-1 before the treatment. The full width at half-maximum of the absorption band was reduced to 65 cm-1.