Characterization of Trap States at Silicon-On-Insulator (SOI)/Buried Oxide (BOX) Interface by Back Gate Transconductance Characteristics in SOI MOSFETs
Characterization of Trap States at Silicon-On-Insulator (SOI)/Buried Oxide (BOX) Interface by Back Gate Transconductance Characteristics in SOI MOSFETs
复制标题
通过 SOI MOSFET 中的背栅跨导特性表征绝缘体上硅 (SOI)/埋氧化物 (BOX) 接口处的陷阱状态
DOI：
10.1143/jjap.42.2004
复制
发表时间：
2003
影响因子：
1.5
通讯作者：
T. Sugano
中科院分区：
文献类型：
--
作者：
Y. Nakajima;H. Tomita;K. Aoto;Nobuhiro Ito;T. Hanajiri;T. Toyabe;T. Morikawa;T. Sugano
我们的特征在于陷阱状态在绝缘体上硅（SOI）/埋氧（BOX）界面的外延层转移（ELTRAN）晶片和低剂量隔离注入氧（SIMOX）晶片。我们制定了一个简单的解析形式，以获得陷阱态密度的分布从SOI金属氧化物半导体场效应晶体管（MOSFET）的实验和模拟的陷阱态的比较。我们观察到低剂量SIMOX晶片上MOSFET的背栅电阻下降。因此，在低剂量SIMOX硅片中，SOI/BOX界面的禁带中存在着密度为5 ×1012 cm-2·eV-1的“类受主电子陷阱”和密度为1012 cm-2·eV-1的“类施主空穴陷阱”，而ELTRAN晶片中SOI/BOX界面处的陷阱密度小于1011 cm-2·eV-1。我们还发现，在SOI/BOX界面处具有高密度陷阱态的低剂量SIMOX晶片上的MOSFET中，扭结效应被抑制。
We characterized trap states at silicon-on-insulator (SOI)/buried oxide (BOX) interfaces in epitaxial layer transfer (ELTRAN) wafers and in low-dose separation by implanted oxygen (SIMOX) wafers. We formulated a simple analytical form to obtain the distribution of density of trap states from a comparison of the experimental transconductance and simulated transconductance of SOI metal oxide semiconductor field effect transistors (MOSFETs). We observed dips in back gate transconductance in MOSFETs on low-dose SIMOX wafers. Consequently, we concluded that “acceptor-like electron traps” with the density of 5 ×1012 cm-2·eV-1 near the conduction band edge Ec and “donor-like hole traps” with the density of 1012 cm-2·eV-1 near the valence band edge Ev are distributed in the forbidden band of Si at SOI/BOX interfaces in low-dose SIMOX wafers, while the trap density at SOI/BOX interfaces is less than 1011 cm-2·eV-1 in ELTRAN wafers. We also found that the kink effect is suppressed in MOSFETs on low-dose SIMOX wafers with a high density of trap states at the SOI/BOX interface.