Surface reaction mechanism in MOVPE growth of ZnSe revealed using radicals produced by photolysis of alkyl azide
Surface reaction mechanism in MOVPE growth of ZnSe revealed using radicals produced by photolysis of alkyl azide
复制标题
利用烷基叠氮化物光解产生的自由基揭示了 ZnSe MOVPE 生长的表面反应机制
DOI：
10.1016/s0169-4332(99)00428-6
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发表时间：
2000
影响因子：
6.7
通讯作者：
N. Sakudo
中科院分区：
文献类型：
--
作者：
Keiji Hayashi;Akifumi Maeda;M. Fujiyama;Y. Kitagawa;N. Sakudo
通过对生长表面的原位光学监测，研究了在二乙基锌(DEZn)和二甲基硒(DMSE)交替作用下，锌硒的外延生长机理。当以H_2为载气时，在DEZn供应下，光反射率随时间的变化呈锯齿状。在N_2载气生长实验中，当激光光解叠氮烷所产生的中性自由基被提供给DEZn时，也观察到锯齿反射信号。在此基础上，从量子化学的角度讨论了共存H_2促进生长的微观机理。
Epitaxial growth mechanism of ZnSe under alternate supply of diethylzinc (DEZn) and dimethylselenium (DMSe) was studied by in situ optical monitoring of the growing surface. When H2was used as carrier gas, the time-dependent optical reflectance was found to exhibit a sawtooth pattern under DEZn supply. The sawtooth reflection signal was also observed in growth experiments using N2carrier gas when DEZn was provided after supply of neutral free radicals produced by laser photolysis of alkyl azide. Based on these experimental results, microscopic mechanism of growth enhancement by coexistent H2is discussed in terms of ab initio quantum chemistry.