Growth of MoS2(1-x)Se2x (x=0.41-1.00) Monolayer Alloys with Controlled Morphology by Physical Vapor Deposition

Growth of MoS2(1-x)Se2x (x=0.41-1.00) Monolayer Alloys with Controlled Morphology by Physical Vapor Deposition
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DOI:
10.1021/acsnano.5b02506
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发表时间:
2015-07-01
期刊:
影响因子:
17.1
通讯作者:
Xie, Liming
Xie, Liming
中科院分区:
材料科学1区
文献类型:
--
作者:
Feng, Qingliang;Mao, Nannan;Xie, Liming

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过渡金属二硫属化物(TMD)单层合金是二维材料的一个分支,它可以随着成分的变化而具有大范围的带隙调谐。制备具有可控成分、可控畴尺寸和边缘结构的二维TMD单层合金具有很大的挑战性。在目前的工作中,我们报告的生长MoS 2(1-x)Se 2x单层合金(x = 0.41-1.00)与控制的形态和大域尺寸使用物理气相沉积(PVD)。通过控制沉积温度,获得了具有不同边缘取向(Mo锯齿形和S/Se锯齿形边缘取向)的MoS_2(1-x)Se_2x单层合金。通过调节沉积区的温度梯度,获得了MoS_2(1-x)Se_(2x)单层合金(x = 0.41-1.00)的大畴尺寸,最大可达20 μ m。与先前获得的MoS 2(1-x)Se 2x单层合金(x = 0-0.40)一起,带隙光致发光(PL)从1.86eV(即,665 nm,在x = 0.00时达到)至1.55 eV(即,800 nm,在x = 1.00时达到)。另外,在MoS 2(1-x)Se 2 x单层合金中观察到了拉曼峰分裂。该工作为制备具有不同边缘取向的MoS 2(1-x)Se 2x单层合金提供了一种方法,对其他二维材料的可控生长具有一定的借鉴意义。
Transition-metal dichalcogenide (TMD) monolayer alloys are a branch of two-dimensional (2D) materials which can have large-range band gap tuning as the composition changes. Synthesis of 2D TMD monolayer alloys with controlled composition as well as controlled domain size and edge structure is of great challenge. In the present work, we report growth of MoS2(1-x)Se2x monolayer alloys (x = 0.41-1.00) with controlled morphology and large domain size using physical vapor deposition (PVD). MoS2(1-x)Se2x, monolayer alloys with different edge orientations (Mo-zigzag and S/Se-zigzag edge orientations) have been obtained by controlling the deposition temperature. Large domain size of MoS2(1-x)Se2x monolayer alloys (x = 0.41-1.00) up to 20 mu m have been obtained by tuning the temperature gradient in the deposition zone. Together with previously obtained MoS2(1-x)Se2x monolayer alloys (x = 0-0.40), the band gap photoluminescence (PL) is continuously tuned from 1.86 eV (i.e., 665 nm, reached at x = 0.00) to 1.55 eV (i.e., 800 nm, reached at x = 1.00). Additionally, Raman peak splitting was observed in MoS2(1-x)Se2x monolayer alloys. This work provides a way to synthesize MoS2(1-x)Se2x monolayer alloys with different edge orientations, which could be benefit to controlled growth of other 2D materials.