EFFECT OF VISCOUS-FLOW ON ION DAMAGE NEAR SOLID-SURFACES
EFFECT OF VISCOUS-FLOW ON ION DAMAGE NEAR SOLID-SURFACES
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DOI：
10.1103/physrevlett.72.364
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发表时间：
1994-01-17
影响因子：
8.6
通讯作者：
AVERBACK, RS
中科院分区：
文献类型：
--
作者：
GHALY, M;AVERBACK, RS
分子动力学计算机模拟10和20 keV的Au轰击Au基板进行阐明，表面上的缺陷产生的影响。几乎所有的损坏都是由于局部熔化和热液体粘滞流到表面上造成的。对于10千电子伏的事件，554原子流向表面，这导致了位错网络的形成，延伸几乎等于6纳米以下的表面。只有三个间隙原子，没有孤立的空位或小空位团的产生。环穿孔和非线性溅射的性质进行了讨论。
Molecular dynamics computer simulations of 10 and 20 keV Au bombardment of Au substrates were performed to elucidate, the influence of surfaces on defect production. Nearly all of the damage was due to local melting and viscous flow of hot liquid onto the surface. For the 10 keV event, 554 atoms flowed to the surface, and this led to the formation of a dislocation network that extended almost-equal-to 6 nm below the surface. Only three interstitial atoms and no isolated vacancies or small vacancy clusters were produced. Loop punching and the nature of nonlinear sputtering are also discussed.