Variable Barrier Height AlGaAs/GaAs Quantum Cascade Laser Operating at 3.7?THz
Variable Barrier Height AlGaAs/GaAs Quantum Cascade Laser Operating at 3.7?THz
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可变势垒高度 AlGaAs/GaAs 量子级联激光器，工作频率为 3.7?THz
DOI：
10.1002/pssa.201700424
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
Hirayama Hideki
中科院分区：
文献类型：
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作者：
Lin Tsung-Tse;Hirayama Hideki
太赫兹（QCL）是具有窄带宽和宽工作频率范围的大输出功率半导体基太赫兹源。然而，THz准分子激光器的工作温度仍然受到其有源区设计的限制。Matyas等人（2012）理论上预测，通过引入可变势垒高度结构，可以获得具有更高光学增益的AlGaAs/GaAs THz QCL（Matyas等人，J.Appl.Phys.2012，111，103106）。基于所提出的可变势垒QC结构，我们制作了AlGaAs/GaAs三阱型THz QCL，具有额外的非常薄的第二提取势垒和低势垒高度的发射势垒。利用该器件，我们获得了3.7THz的激光输出，最高工作温度为145 K。
THz (QCLs) are promising large output power semiconductor‐based THz sources with narrow bandwidths and wide operating frequency ranges. However, the operating temperature of THz QCLs is still limited by the design of its active region. Matyas et al. (2012) theoretically predicted that AlGaAs/GaAs THz QCLs with higher optical gain could be obtained by introducing a variable barrier height structure (Matyas et al.,J. Appl. Phys.2012,111, 103106). Based on the proposed variable barrier QC structure, we fabricate AlGaAs/GaAs three‐well type THz QCLs with an additional very thin second extraction barrier and a low barrier height emission barrier. With this device, we obtain lasing operation at 3.7 THz at a maximum operating temperature of 145 K.