β-FeSi2 Single Crystals Grown from Solution
β-FeSi2 Single Crystals Grown from Solution
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从溶液中生长的 β-FeSi2 单晶
DOI：
10.1143/jjap.40.1367
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发表时间：
2001
影响因子：
1.5
通讯作者：
I. Kikuma
中科院分区：
文献类型：
--
作者：
H. Udono;I. Kikuma
采用温度梯度溶液法生长了高质量的β-FeSi_2单晶。在低于900°C的生长温度下获得了具有清晰小平面的多面体形状的块状晶体。劳厄观察证实，晶体是没有孪晶的优质单晶。β-FeSi_2（800）反射的X射线摇摆曲线的半峰全宽为53弧秒。室温电阻率为0.03-0.04 Ωcm，导电类型为p型。
We have grown high-quality β-FeSi2 bulk single crystals by a temperature gradient solution growth method using Ga solvent. Polyhedral shaped bulk crystals with clear facet planes were obtained below the growth temperature of 900°C. Laue observation confirmed that crystals are high-quality single crystals without twins. Full-width at half maxim of the X-ray rocking curve at β-FeSi2 (800) reflection was 53 arcsec. The conduction was p-type and the resistivity was 0.03–0.04 Ωcm at room temperature.