Effect of Low-Energy Ion Flux Irradiation on Synthesis of Superhard Nanocomposite Films
Effect of Low-Energy Ion Flux Irradiation on Synthesis of Superhard Nanocomposite Films
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DOI：
10.1143/jjap.45.7866
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发表时间：
2006-10
影响因子：
1.5
通讯作者：
Zhuguo Li;S. Miyake;Yixiong Wu
中科院分区：
文献类型：
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作者：
Zhuguo Li;S. Miyake;Yixiong Wu
采用电感耦合等离子体（ICP）辅助磁控溅射法在Si（100）基片上沉积了Ti-Si-N薄膜。通过控制RF功率来改变衬底处的入射离子通量密度。研究了低能离子束辐照对Ti-Si-N薄膜生长、显微结构和力学性能的影响。离子通量密度的增加导致择优取向从TiN（111）转移到TiN（200）。在高密度（~ 2.0 mA/cm ~ 2）低能（~ 20 eV）离子辐照条件下，在较低的沉积温度（300 °C）下制备了低应力纳米TiN/a-Si_3 N_4（nc-TiN/a-Si_3 N_4）薄膜。
Ti–Si–N films were deposited on the grounded Si(100) substrates by inductively coupled plasma (ICP)-assisted magnetron sputtering. The incident ion flux density at the substrate was varied by controlling the RF power. The effects of low-energy ion flux irradiation on the growth, microstructure and mechanical properties of the Ti–Si–N films have been investigated. An increase in ion flux density causes a transfer of the preferred orientation from TiN(111) to TiN(200). Under the conditions of high-density (∼2.0 mA/cm2) low-energy (∼20 eV) ion irradiation, low-stressed superhard nanocrystalline TiN/amorphous Si3N4 (nc-TiN/a-Si3N4) film was synthesized at the relatively low deposition temperature of 300 °C.