Engineering shallow spins in diamond with nitrogen delta-doping
Engineering shallow spins in diamond with nitrogen delta-doping
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DOI：
10.1063/1.4748280
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发表时间：
2012-08-20
影响因子：
4
通讯作者：
Awschalom, David D.
中科院分区：
文献类型：
--
作者：
Ohno, Kenichi;Heremans, F. Joseph;Awschalom, David D.
我们证明了纳米精度的深度控制的氮空位（NV）中心的表面附近的合成金刚石使用原位氮δ掺杂技术在等离子体增强化学气相沉积。尽管它们接近表面，但深度（d）在5至100 nm范围内的掺杂NV中心显示出长的自旋相干时间，在d = 5 nm处T-2>100 μ s，在d ≥ 50 nm处T-2>600 μ s。在这种浅NV中心中观察到的一致的长自旋相干性使得诸如原子级外部自旋传感和混合量子架构的应用成为可能。(C)2012年美国物理学会。[http：//dx.doi.org/10.1063/1.4748280]
We demonstrate nanometer-precision depth control of nitrogen-vacancy (NV) center creation near the surface of synthetic diamond using an in situ nitrogen delta-doping technique during plasma-enhanced chemical vapor deposition. Despite their proximity to the surface, doped NV centers with depths (d) ranging from 5 to 100 nm display long spin coherence times, T-2>100 mu s at d = 5 nm and T-2>600 mu s at d >= 50 nm. The consistently long spin coherence observed in such shallow NV centers enables applications such as atomic-scale external spin sensing and hybrid quantum architectures. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4748280]