Observation of the magnetoelectric reversal process of the antiferromagnetic domain

Observation of the magnetoelectric reversal process of the antiferromagnetic domain
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DOI:
10.1063/1.5053925
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发表时间:
2018-12
影响因子:
4
通讯作者:
Y. Shiratsuchi;Shunsuke Watanabe;Hiroaki Yoshida;Noriaki Kishida;R. Nakatani;Y. Kotani;K. Toyoki;Tetsuya Nakamura
Y. Shiratsuchi;Shunsuke Watanabe;Hiroaki Yoshida;Noriaki Kishida;R. Nakatani;Y. Kotani;K. Toyoki;Tetsuya Nakamura
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Y. Shiratsuchi;Shunsuke Watanabe;Hiroaki Yoshida;Noriaki Kishida;R. Nakatani;Y. Kotani;K. Toyoki;Tetsuya Nakamura

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我们调查的垂直交换偏置,这是由磁电效应驱动的开关过程中,进行磁畴观察,使用扫描软X射线磁性圆二色性显微镜。等温和同时施加磁场和电场切换垂直交换偏置极性。开关过程通过反向畴的成核和生长进行。铁磁/反铁磁畴和交换偏置极性之间的对应关系表明,界面反铁磁自旋/畴反转是垂直交换偏置极性磁电开关的主要原因,利用扫描软X射线磁性圆二色性显微镜观察了磁电效应驱动的垂直交换偏置的开关过程.等温和同时施加磁场和电场切换垂直交换偏置极性。开关过程通过反向畴的成核和生长进行。铁磁/反铁磁畴和交换偏置极性之间的对应关系表明,界面反铁磁自旋/畴反转是负责垂直交换偏置极性的磁电开关。
We investigated the switching process of the perpendicular exchange bias, which is driven by the magnetoelectric effect, by conducting magnetic domain observations using scanning soft X-ray magnetic circular dichroism microscopy. Isothermal and simultaneous application of magnetic and electric fields switches the perpendicular exchange bias polarity. The switching process proceeds by the nucleation and growth of reversed domains. The correspondence among the ferromagnetic/antiferromagnetic domains and exchange bias polarity indicates that interfacial antiferromagnetic spin/domain reversal is responsible for the magnetoelectric switching of the perpendicular exchange bias polarity.We investigated the switching process of the perpendicular exchange bias, which is driven by the magnetoelectric effect, by conducting magnetic domain observations using scanning soft X-ray magnetic circular dichroism microscopy. Isothermal and simultaneous application of magnetic and electric fields switches the perpendicular exchange bias polarity. The switching process proceeds by the nucleation and growth of reversed domains. The correspondence among the ferromagnetic/antiferromagnetic domains and exchange bias polarity indicates that interfacial antiferromagnetic spin/domain reversal is responsible for the magnetoelectric switching of the perpendicular exchange bias polarity.