Area-Selective Atomic Layer Deposition on Chemically Similar Materials: Achieving Selectivity on Oxide/Oxide Patterns
Area-Selective Atomic Layer Deposition on Chemically Similar Materials: Achieving Selectivity on Oxide/Oxide Patterns
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DOI：
10.1021/acs.chemmater.0c03227
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发表时间：
2021-01-08
影响因子：
8.6
通讯作者：
Bent, Stacey F.
中科院分区：
文献类型：
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作者：
Liu, Tzu-Ling;Bent, Stacey F.
区域选择性原子层沉积（AS-ALD）引起了越来越多的兴趣，但该过程通常需要具有显着不同化学性质的基材材料。我们引入了一种流程，通过在化学相似材料的图案上演示 AS-ALD，将应用扩展到更通用的材料系统。研究的基材材料为 Al2O3、HfO2、TiO2、Ta2O5 和 SiO2。通过利用十八烷基膦酸 (ODPA) 自组装单层 (SAM) 在各种介电表面上的不同反应性，我们使用 SAM 作为 ALD 抑制剂，实现 ZnO 和 Al2O3 的选择性 ALD。以 SiO2 作为生长表面，在 ODPA 保护的 Al2O3 和 HfO2 衬底上实现了对 ZnO 和 Al2O3 ALD 的最佳阻挡性能，在对照 Si 晶圆上分别生长 14 nm ZnO 和 2.5 nm Al2O3 后，其选择性达到 0.9 以上。还探索了不同金属氧化物之间的选择性，包括 HfO2/Al2O3 模式。通过优化溶剂和 ODPA SAM 沉积时间，HfO2 生长表面上至少 4 nm ZnO ALD 的选择性可以达到 0.9 以上，同时防止 Al2O3 非生长表面上的生长。这项研究介绍了一种实现更普遍选择性的策略，并为下一代电子设备的新应用开辟了可能性。
Area-selective atomic layer deposition (AS-ALD) is attracting increasing interest, but the process usually requires substrate materials with substantially different chemical properties. We introduce a process that expands the application to more general material systems by demonstrating AS-ALD on patterns with chemically similar materials. The substrate materials investigated are Al2O3, HfO2, TiO2, Ta2O5, and SiO2. By taking advantage of differential reactivity of octadecylphosphonic acid (ODPA) self-assembled monolayers (SAMs) on the various dielectric surfaces, we use the SAMs as ALD inhibitors to achieve selective ALD of both ZnO and Al2O3. With SiO2 as the growth surface, the best blocking performance against ZnO and Al2O3 ALD is achieved on ODPA-protected Al2O3 and HfO2 substrates which reach selectivities above 0.9 after 14 nm ZnO and 2.5 nm Al2O3 growth, respectively, on control Si wafers. Selectivity between different metal oxides is also explored, including HfO2/Al2O3 patterns. With the optimization of solvent and ODPA SAM deposition time, selectivity above 0.9 can be achieved for at least 4 nm ZnO ALD on a HfO2 growth surface, while preventing growth on an Al2O3 nongrowth surface. This study introduces a strategy for achieving more general selectivity and opens up the possibility for new applications in next generation electronic devices.