Amorphous silicon technology
Amorphous silicon technology
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非晶硅技术
DOI：
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发表时间：
1988
期刊：
影响因子：
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通讯作者：
Y. Hamakawa
中科院分区：
文献类型：
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作者：
A. Madan;M. Thompson;P. Taylor;P. G. Lecomber;Y. Hamakawa
本卷讨论的生长方法包括常规和远程等离子体增强化学气相沉积 (PECVD)、催化 CVD (CTLCVD)、常压 CVD (APCVD)、甚高频等离子体 CVD (VHCVD) 和磁控溅射。一些论文讨论了使用乙硅烷来提高增长率。薄膜生长动力学的一般问题是本卷讨论的一个重要话题。监测薄膜生长和等离子体诊断的几种机制也是讨论的主题。
The growth methods discussed in this volume include both regular and remote plasma enhanced chemical vapor deposition (PECVD), catalytic CVD (CTLCVD), atmospheric pressure CVD (APCVD), very high frequency plasma CVD (VHCVD) and magnetron sputtering. Some of the papers discuss the use of disilane to increase growth rates. The general questions of the kinetics of film growth is an important topic of discussion in this volume. Several mechanisms for monitoring film growth and lasma diagnostics are also topics of discussion.