Scanning photocurrent microscopy in single nanowire devices
Scanning photocurrent microscopy in single nanowire devices
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DOI：
10.1117/12.899410
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发表时间：
2011-09
期刊：
影响因子：
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通讯作者：
Rion Graham;Christopher W Miller;M. Triplett;Dong Yu
中科院分区：
文献类型：
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作者：
Rion Graham;Christopher W Miller;M. Triplett;Dong Yu
扫描光电流显微镜（SPCM）是研究半导体纳米线中局部电子结构和电荷输运的有力技术。在这里，我们应用这种技术来探索胶体PbSe纳米线和VO 2纳米梁。场效应晶体管纳入单一胶体PbSe纳米线制造。一个快速，灵敏的偏振依赖的光响应进行了观察。生长的PbSe纳米线的SPCM示出了向下的带弯曲朝向金属电极，与它们的p型性质一致。在54 °C下，VO 2纳米梁的SPCM显示在金属/绝缘畴边界处的能带弯曲。在室温下，我们观察到VO 2纳米梁中间的光电流点，表明局部电场可能由缺陷引起。
Scanning photocurrent microscopy (SPCM) is a powerful technique for investigating local electronic structures and charge transport in semiconductor nanowires. Here we apply this technique to explore colloidal PbSe nanowires and VO2 nanobeams. Field effect transistors incorporating single colloidal PbSe nanowires were fabricated. A fast, sensitive polarization-dependent photoresponse was observed. SPCM of as-grown PbSe nanowires showed a downward band bending towards the metal electrodes, consistent with their p-type nature. At 54 °C, SPCM of VO2 nanobeams revealed band bending at the metallic/insulating domain boundaries. At room temperature, we observed photocurrent spots in the middle of the VO2 nanobeams, indicating local electric fields likely caused by defects.