Carrier concentration induced band-gap shift in Al-doped Zn1-xMgxO thin films
Carrier concentration induced band-gap shift in Al-doped Zn1-xMgxO thin films
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DOI：
10.1063/1.2424308
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发表时间：
2006-12-25
影响因子：
4
通讯作者：
Ohshima, T.
中科院分区：
文献类型：
--
作者：
Lu, J. G.;Fujita, S.;Ohshima, T.
采用化学气相沉积法在玻璃衬底上制备了Al掺杂的Zn 1-xMgxO透明导电薄膜。电阻率可降低到10（-3）Ω cm，在可见光区的光学透射率大于85%。系统地研究了载流子浓度对Zn_（1-x）Mg_xO合金带隙位移的影响。费米能级带填充效应和带隙重整化效应可以充分解释能隙的变化。随着Mg含量的增加，Zn_（1-x）Mg_xO（x=0-0.21）合金的电子有效质量从0.30m（0）增加到0.49m（0）。Al掺杂效率随合金成分的增加而降低。(c)2006年，美国物理学会。
Transparent conducting Al-doped Zn1-xMgxO thin films were grown on glass substrates by chemical vapor deposition. The resistivity could be lowered to 10(-3) Omega cm with optical transmittance above 85% in visible regions. The influence of carrier concentration on band-gap shift in Zn1-xMgxO alloys was systematically studied. The shift of energy gap could be fully explained by the Fermi-level band filling and band-gap renormalization effects. As the Mg content increased, the electron effective masses in Zn1-xMgxO (x=0-0.21) alloys increased from 0.30m(0) to 0.49m(0). The Al-doping efficiency was reduced with the increase in alloy composition. (c) 2006 American Institute of Physics.