Phase formation in the thin film Fe/GaAs system
Phase formation in the thin film Fe/GaAs system
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薄膜 Fe/GaAs 体系中的相形成
DOI：
10.1063/1.2888748
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发表时间：
2008
影响因子：
4
通讯作者：
C. Palmstrøm
中科院分区：
文献类型：
--
作者：
B. Schultz;C. Adelmann;X. Dong;S. Mckernan;C. Palmstrøm
用卢瑟福背散射光谱、X射线衍射仪和透射电子显微镜研究了Fe外延膜和GaAs外延膜之间的界面反应随生长后退火条件的变化。在450℃时，在Fe/GaAs(001)界面观察到两个稳定的二元相，在Fe界面附近形成DO3Fe3Ga，在GaAs界面附近形成Fe2As。Fe在反应界面的扩散速率与Ga和As的扩散速率相似，形成了粗糙的界面混合区域。
Interfacial reactions between epitaxial films of Fe and GaAs were examined using Rutherford backscattering spectrometry, x-ray diffraction, and transmission electron microscopy as a function of postgrowth annealing conditions. At 450°C, two stable binary phases were observed at the Fe∕GaAs(001) interface with DO3Fe3Ga forming near the Fe interface and Fe2As forming near the GaAs interface. The diffusion rate of Fe in the reacted interface was found to be of similar magnitude to that of Ga and As resulting in a rough and intermixed interfacial region.