Design, Fabrication, and Application of GaN-Based Micro-LED Arrays With Individual Addressing by N-Electrodes
Design, Fabrication, and Application of GaN-Based Micro-LED Arrays With Individual Addressing by N-Electrodes
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DOI：
10.1109/jphot.2017.2768478
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发表时间：
2017-11
影响因子：
2.4
通讯作者：
E. Xie;M. Stonehouse;R. Ferreira;J. McKendry;J. Herrnsdorf;Xiangyu He;S. Rajbhandari;H. Chun;Aravind V. N. Jalajakumari;Oscar Almer;G. Faulkner;I. Watson;E. Gu;R. Henderson;D. O’brien;M. Dawson
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文献类型：
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作者：
E. Xie;M. Stonehouse;R. Ferreira;J. McKendry;J. Herrnsdorf;Xiangyu He;S. Rajbhandari;H. Chun;Aravind V. N. Jalajakumari;Oscar Almer;G. Faulkner;I. Watson;E. Gu;R. Henderson;D. O’brien;M. Dawson
我们展示了GaN基微发光二极管（$\mu$LED）阵列共享一个共同的p-电极（阳极），并与单独寻址的n-电极（阴极）的发展，性能和应用。与传统的GaN基LED阵列相比，这种阵列设计采用了公共电极和单独电极的反向结构，这使得它具有创新性，并与基于n型金属氧化物半导体（NMOS）晶体管的驱动器兼容，以实现更快的调制。通过在450 nm处发射的示例阵列来说明优异的性能特征。在17.7kA/cm^2 $的电流密度下，直径为24 μ m的单LED器件的光功率和小信号电光调制带宽分别超过2.0mW和440 MHz。优化的制造工艺还确保了每个阵列的工作$\mu$LED元件的高产量和优良的元件到元件的电气/光学特性的均匀性。可见光通信的结果作为一个应用程序的阵列集成了NMOS驱动器。在几百Mb/s的数据传输，没有比特错误，实现了单和多个$\mu$LED元件的操作，根据开关键控调制方案。传输的阶梯状的PWM波形也被证明，以确认$\mu$ LED元件可以传输离散的多电平信号。
We demonstrate the development, performance, and application of a GaN-based micro-light emitting diode ( $\mu$LED) array sharing a common p-electrode (anode), and with individually addressable n-electrodes (cathodes). Compared to conventional GaN-based LED arrays, this array design employs a reversed structure of common and individual electrodes, which makes it innovative and compatible with n-type metal-oxide-semiconductor (NMOS) transistor-based drivers for faster modulation. Excellent performance characteristics are illustrated by an example array emitting at 450 nm. At a current density of 17.7 kA/cm$^2$ in direct-current operation, the optical power and small signal electrical-to-optical modulation bandwidth of a single $\mu$LED element with 24 $\mu$m diameter are over 2.0 mW and 440 MHz, respectively. The optimized fabrication process also ensures a high yield of working $\mu$LED elements per array and excellent element-to-element uniformity of electrical/optical characteristics. Results on visible light communication are presented as an application of an array integrated with an NMOS driver. Data transmission at several hundred Mb/s without bit error is achieved for single- and multiple-$\mu$ LED-element operations, under an on–off-keying modulation scheme. Transmission of stepped sawtooth waveforms is also demonstrated to confirm that the $\mu$ LED elements can transmit discrete multilevel signals.