Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al0.8Ga0.2N/AlN on SiC With Drain Current Over 100 mA/mm
Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al0.8Ga0.2N/AlN on SiC With Drain Current Over 100 mA/mm
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DOI：
10.1109/led.2019.2923902
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发表时间：
2019-08-01
影响因子：
4.9
通讯作者：
Palacios, Tomas
中科院分区：
文献类型：
--
作者：
Lemettinen, Jori;Chowdhury, Nadim;Palacios, Tomas
本文报道了在碳化硅衬底上制作的N极Al0.8Ga0.2N/AlN连续梯度沟道极化掺杂场效应晶体管(PolFET)。源漏距离为12微米的PolFET的最大漏电流为62.8 mA/mm，通断电流比为1.1×10(4)。最大漏电流在20摄氏度至250摄氏度的工作温度之间保持稳定。随着30 nm厚的Al_2O_3栅绝缘层的加入，最大漏电流增加到126 mA/mm。
This letter reports the demonstration of N-polar Al0.8Ga0.2N/AlN continuously-graded-channel polarization-doped field-effect transistors (PolFETs) on SiC. A PolFET with a source to drain distance of 12 mu m exhibited a maximum drain current of 62.8 mA/mm and an ON/OFF current ratio of 1.1 x 10(4). The maximum drain current was stable between 20 degrees C and 250 degrees C operating temperatures. With the addition of 30-nm-thick Al2O3 gate insulator the maximum drain current increased to 126 mA/mm.