Distance dependent interaction as the limiting factor for Si nanocluster to Er energy transfer in silica
Distance dependent interaction as the limiting factor for Si nanocluster to Er energy transfer in silica
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DOI：
10.1063/1.2362600
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发表时间：
2006-10
影响因子：
4
通讯作者：
B. Garrido;C. García;P. Pellegrino;D. Navarro‐Urrios;N. Daldosso;Lorenzo Pavesi;F. Gourbilleau
中科院分区：
文献类型：
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作者：
B. Garrido;C. García;P. Pellegrino;D. Navarro‐Urrios;N. Daldosso;Lorenzo Pavesi;F. Gourbilleau
硅过量、铒含量和工艺参数已在一系列共溅射氧化物层中进行了优化，以最大限度地提高铒发射和寿命。已对共振 (488 nm) 和非共振 (476 nm) 激发的激发 Er 量作为入射光子通量的函数进行了量化。结果表明，最多 3.5% 的 Er 离子可通过 Si 纳米团簇 (Si-nc) 激发。这种低值不能仅通过协同上转换和/或激发态吸收来解释。开发了一种短程 (0.5 nm) 距离相关的相互作用模型来解释这种低 Er 粒子数反转。该模型指出 Si-nc [(3–5)×1017cm−3] 的低密度是该系统中间接 Er 激发的最终限制步骤。
Si excess, Er content, and processing parameters have been optimized in a series of cosputtered oxide layers for maximizing Er emission and lifetime. The amount of excited Er as a function of the incident photon flux has been quantified for resonant (488nm) and nonresonant (476nm) excitations. Results show that a maximum of 3.5% of Er ions is excitable through the Si nanoclusters (Si-nc). This low value cannot be explained only by cooperative upconversion and/or excited state absorption. A short range (0.5nm) distance dependent interaction model is developed that accounts for this low Er population inversion. The model points to the low density of Si-nc [(3–5)×1017cm−3] as the ultimate limiting step for indirect Er excitation in this system.