Novel In-Line Microstrip-to-Waveguide Transition Based on E-Plane Probe T-Junction Structure

Novel In-Line Microstrip-to-Waveguide Transition Based on E-Plane Probe T-Junction Structure
复制标题

DOI:
10.1109/lmwc.2021.3083281
复制
发表时间:
2021-05
影响因子:
3
通讯作者:
Zhengbin Xu;Jie Xu;C. Qian
Zhengbin Xu;Jie Xu;C. Qian
中科院分区:
工程技术2区
文献类型:
--
作者:
Zhengbin Xu;Jie Xu;C. Qian

文献摘要

被引文献

相似文献

本文提出了一种新型的同轴E面探针微带-波导(M2 W)过渡结构。建议的同轴过渡结构由一个波导T型接头,它有两个短路的分支波导的四分之一波长的差异,在长度和微带线馈电探针,这是在主波导线。基于该结构设计了一个W波段同轴M2 W过渡结构。背靠背的测量结果表明,反射系数优于-10 dB,插入损耗小于1 dB,在整个$W$频段。测量结果与模拟结果吻合较好。
In this letter, a novel in-line $E$ -plane probe microstrip-to-waveguide (M2W) transition is proposed. The proposed in-line transition structure consists of a waveguide T-junction which has two short-circuited branch waveguides with a quarter-wavelength difference in length and a microstrip line fed probe that is in line with the main waveguide. A $W$ -band in-line M2W transition is designed based on the proposed structure. Back-to-back measured results show that the reflection coefficient is better than −10 dB and the insertion loss is less than 1 dB over the full $W$ -band. The measurements agree well with the simulations.