Conductance quantisation in patterned gate In0.75Ga0.25As structures up to 6 × (2e 2/h).
Conductance quantisation in patterned gate In0.75Ga0.25As structures up to 6 × (2e 2/h).
复制标题
图案化栅极 In0.75Ga0.25As 结构中的电导量子化高达 6 × (2e 2/h)。
DOI：
10.1088/1361-648x/aafd05
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
Gul Y
中科院分区：
文献类型：
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作者：
Gul Y
我们介绍了在二维接触区域具有rashba型自旋轨道耦合的In 0.75 Ga 0.25 As一维通道器件的电测量结果。一维通道入口的时间反转不对称性抑制了后向散射，从而增强了弹道输运特性，具有清晰的量子化电导平台，最高可达6×（2e /h）。在源极和漏极欧姆触点之间施加直流电压和面内磁场确认了弹道输运图。对于非对称栅极偏置，横向自旋轨道耦合效应较弱。然而，当有效Rashba场与外加磁场垂直时，由于Rashba型自旋-轨道耦合导致一维通道中的g因子从二维的9减小到最低子带的~ 6.5。
We present electrical measurements from In 0.75 Ga 0.25 As 1D channel devices with Rashba-type, spin–orbit coupling present in the 2D contact regions. Suppressed backscattering as a result of the time-reversal asymmetry at the 1D channel entrance results in enhanced ballistic transport characteristics with clear quantised conductance plateaus up to 6×(2e 2/h). Applying DC voltages between the source and drain ohmic contacts and an in-plane magnetic field confirms a ballistic transport picture. For asymmetric patterned gate biasing, a lateral spin–orbit coupling effect is weak. However, the Rashba-type spin–orbit coupling leads to a g-factor in the 1D channel that is reduced in magnitude from the 2D value of 9 to~ 6.5 in the lowest subband when the effective Rashba field and the applied magnetic field are perpendicular.