Disorder strongly enhances Auger recombination in conductive quantum-dot solids.
Disorder strongly enhances Auger recombination in conductive quantum-dot solids.
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DOI：
10.1038/ncomms3329
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发表时间：
2013
影响因子：
16.6
通讯作者：
Siebbeles LD
中科院分区：
文献类型：
--
作者：
Gao Y;Suchand Sandeep CS;Schins JM;Houtepen AJ;Siebbeles LD
俄歇复合（AR）是光电器件中一种重要的损耗机制，但在低激发密度下，它通常不是很有效。研究表明，在导电量子点固体中，即使在激发密度低至10−3 /量子点时，AR也是主要的载流子衰减路径，并且随着载流子迁移率的增加，AR变得更快。蒙特卡罗模拟显示，这种有效的AR是由“俄热热点”中的载流子聚集产生的：由于能量紊乱而存在的低能量位点。失序增强AR是一种普遍效应，预计在所有失序物质中都有活性。对于在每个量子点载流子密度超过~10−3载流子的情况下工作的器件，观察到的有效AR是一个值得关注的问题。同时，有效的载流子聚合可以用于快速光交换或实现近红外的光增益。了解俄歇复合对于构建更好的光电器件非常重要，因为它是一种至关重要的损耗机制。Gao等人在导电量子点固体中对其进行了研究，发现即使在非常低的激发密度下，它也是主要的载流子衰减路径。
Auger recombination (AR) can be an important loss mechanism for optoelectronic devices, but it is typically not very efficient at low excitation densities. Here we show that in conductive quantum-dot solids, AR is the dominant charge carrier decay path even at excitation densities as low as 10−3 per quantum dot, and that AR becomes faster as the charge carrier mobility increases. Monte Carlo simulations reveal that this efficient AR results from charge carrier congregation in ‘Auger hot spots’: lower-energy sites that are present because of energy disorder. Disorder-enhanced AR is a general effect that is expected to be active in all disordered materials. The observed efficient AR is an issue of concern for devices that work at charge carrier densities in excess of ~10−3 charge carriers per quantum dot. At the same time, efficient carrier congregation could be exploited for fast optical switching or to achieve optical gain in the near infrared. Understanding Auger recombination is important for building better optoelectronics, as it is a crucial loss mechanism. Gao et al. study it in conductive quantum dot solids, and find that it is the dominant charge carrier decay path, even for very low excitation densities.
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