Cu2ZnSnS4 Thin Film Solar Cells Utilizing Sulfurization of Metallic Precursor Prepared by Simultaneous Sputtering of Metal Targets
Cu2ZnSnS4 Thin Film Solar Cells Utilizing Sulfurization of Metallic Precursor Prepared by Simultaneous Sputtering of Metal Targets
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DOI：
10.1143/jjap.50.01bg09
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发表时间：
2011-01
影响因子：
1.5
通讯作者：
N. Momose;M. Htay;Takuto Yudasaka;S. Igarashi;T. Seki;S. Iwano;Y. Hashimoto;K. Ito
中科院分区：
文献类型：
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作者：
N. Momose;M. Htay;Takuto Yudasaka;S. Igarashi;T. Seki;S. Iwano;Y. Hashimoto;K. Ito
Cu2ZnSnS4 (CZTS) 薄膜是通过在密封管中的元素硫气氛下同时溅射金属靶材和硫化金属前驱体来制备的。随后，它们被应用于薄膜太阳能电池的制造。通过控制溅射靶材的面积比以及溅射参数，获得了具有所需成分比和厚度的前驱体。我们通过在高于大气压的硫蒸气压下进行硫化，成功地获得了高质量的多晶CZTS薄膜。通过在 590 °C 硫化 7 分钟的 CZTS 薄膜获得了转换效率为 3.7% 的 CZTS 太阳能电池。
Cu2ZnSnS4 (CZTS) thin films were prepared by simultaneous sputtering of metallic targets and sulfurizing a metallic precursor under elemental sulfur atmosphere in a sealed tube. Subsequently, they were applied to the fabrication of thin film solar cells. The precursors with desired compositional ratio and thickness were obtained by controlling the area ratio of sputtering targets and also sputtering parameters. We have succeeded in obtaining high-quality polycrystalline CZTS thin films by sulfurization under a sulfur vapor pressure higher than atmospheric pressure. A CZTS-based solar cell with 3.7% conversion efficiency was obtained from CZTS films sulfurized at 590 °C for 7 min.