Friction and Wear on Single-Layer Epitaxial Graphene in Multi-Asperity Contacts
Friction and Wear on Single-Layer Epitaxial Graphene in Multi-Asperity Contacts
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DOI：
10.1007/s11249-012-9945-4
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发表时间：
2012-10-01
影响因子：
3.2
通讯作者：
Bennewitz, R.
中科院分区：
文献类型：
--
作者：
Marchetto, D.;Held, C.;Bennewitz, R.
在微米尺度上研究了单层石墨烯的摩擦磨损性能。通过热分解在SiC-6 H（0001）上生长的外延石墨烯被发现具有0.02的初始摩擦系数，在相同的实验条件下显著低于石墨。在往复滑动期间，石墨烯层被损坏。终止SiC层的富碳界面层的0.08的不断变化的摩擦系数仍然低于石墨的摩擦系数，并且比氢蚀刻的SiC衬底的摩擦系数低五倍。滑动轨道内的微米大小的贴片即使在数百次滑动循环后仍保持石墨烯的低摩擦系数。
Friction and wear of single layers of graphene have been studied at the micrometer scale. Epitaxial graphene grown by thermal decomposition on SiC-6H(0001) is found to have an initial friction coefficient of 0.02, significantly lower than graphite under the same experimental conditions. During reciprocal sliding the graphene layer is damaged. The evolving friction coefficient of 0.08 for the carbon-rich interface layer terminating the SiC layer is still lower than that of graphite and five times lower than that of the hydrogen-etched SiC substrate. Micrometer-sized patches within the sliding track retain the low friction coefficient of graphene even after hundred sliding cycles.