Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence
Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence
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DOI：
10.1063/1.1861116
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发表时间：
2005-01-31
影响因子：
4
通讯作者：
Hasegawa, H
中科院分区：
文献类型：
--
作者：
Kumakura, K;Makimoto, T;Hasegawa, H
我们通过对GaN p-n结二极管进行电子束感生电流测量，研究了p型和n-GaN中少数载流子的扩散长度。当位错密度低于108 cm（-2）时，p型GaN中的少数电子扩散长度与Mg掺杂浓度密切相关。随着Mg掺杂浓度从3 × 10 ~（19）cm ~（-3）降低到4 × 10 ~（18）cm ~（-3），它从220 nm增加到950 nm。对于高于109 cm（-2）的相对较高的位错密度，其小于300 nm并且与Mg掺杂浓度无关。另一方面，n-GaN中的少子空穴扩散长度小于250 nm，且受位错密度和Si掺杂浓度的影响较小。讨论了少子扩散长度与掺杂浓度和位错密度的关系。(C)2005年美国物理学会。
We investigated the minority carrier diffusion length in p- and n-GaN by performing electron-beam-induced current measurements of GaN p-n junction diodes. Minority electron diffusion length in p-GaN strongly depended on the Mg doping concentration for relatively low dislocation density below 108 cm(-2). It increased from 220 to 950 nm with decreasing Mg doping concentration from 3 X 10(19) to 4 X 10(18) cm(-3). For relatively high dislocation density above 109 cm(-2), it was less than 300 nm and independent of the Mg doping concentration. On the other hand, the minority hole diffusion length in n-GaN was shorter than 250 nm and less affected by the dislocation density and Si doping concentration. We discuss the doping-concentration and dislocation-density dependence of minority carrier diffusion length. (C) 2005 American Institute of Physics.