Electronic structure of ferromagnetic semiconductor CrGeTe3 by angle-resolved photoemission spectroscopy
Electronic structure of ferromagnetic semiconductor CrGeTe3 by angle-resolved photoemission spectroscopy
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通过角分辨光电子能谱研究铁磁半导体 CrGeTe3 的电子结构
DOI：
10.1103/physrevb.98.125127
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发表时间：
2018-09-14
影响因子：
3.7
通讯作者：
Pan, X. Q.
中科院分区：
文献类型：
--
作者：
Li, Y. F.;Wang, W.;Pan, X. Q.
作为稀有的铁磁性半导体之一，CrGeTe3作为下一代高性能纳米自旋电子器件的潜在候选者，最近引起了人们的极大关注。在本研究中，我们通过密度泛函理论计算和角度分辨光电子能谱测量相结合，直接研究了CrGeTe3的电子结构。低价带以Gamma点为中心，主要由Te5p轨道组成。大多数谱带几乎没有k(Z)弥散，这与其层状晶体结构相一致。然而，由于沿平面外方向有较高的跳跃积分，由p(Z)轨道组成的带显示出显著的Iq色散。此外，通过表面电子掺杂和钾沉积直接测量了0.38 eV的间接带隙。
As one of the rare ferromagnetic semiconductors, CrGeTe3 has recently attracted a great deal of attention as a potential candidate for next-generation high-performance nano-spintronic devices. In this study, by combining density functional theory calculations and angle-resolved photoemission spectroscopy measurements, we explore the electronic structure of CrGeTe3 directly. The low-lying valence bands are centered around the Gamma point and mainly consist of Te 5 p orbitals. The majority of the bands show almost no k(z) dispersion, consistent with its layered crystalline structure. Due to the higher hopping integral along the out-of-plane direction, however, bands comprised of p(z) orbitals exhibit significant IQ dispersion. Furthermore, an indirect band gap of 0.38 eV is directly measured by surface electron doping with potassium deposition.