Area‐selective atomic layer deposition on HOPG enabled by writable electron beam functionalization
Area‐selective atomic layer deposition on HOPG enabled by writable electron beam functionalization
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DOI：
10.1002/nano.202200091
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发表时间：
2022-07
期刊：
影响因子：
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通讯作者：
Gordon Koerner;Quinton K. Wyatt;Brady Bateman;Camden Boyle;M. Young;M. Maschmann
中科院分区：
文献类型：
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作者：
Gordon Koerner;Quinton K. Wyatt;Brady Bateman;Camden Boyle;M. Young;M. Maschmann
面积选择原子层沉积(AS-ALD)技术是一种新兴的自下而上的纳米制造技术，它无需传统的自上而下的光刻技术就可以选择性地沉积图案化的ALD薄膜。为了实现这种图案化，大多数报道的AS-ALD技术使用化学抑制剂层来主动阻止选定区域的ALD表面反应。在这里，展示了一种AS-ALD工艺，它使用聚焦的电子束(电子束)来分解周围的水蒸气，并在高度定向的热解石墨(HOPG)的表面写下高分辨率的羟基化图案。然后，图案化的羟基化区支持随后的ALD沉积。电子束功能化技术通过控制电子束位置、停留时间和电流来促进精确的图案放置。该技术的空间分辨率超过42 nm，表面选择性在69.9%到99.7%之间，这取决于背景成核区的选择。这项工作为在石墨烯衬底上制备As-ALD提供了一条适合于制备石墨烯基纳电子的工艺路线。
Area‐selective atomic layer deposition (AS‐ALD) techniques are an emerging class of bottom‐up nanofabrication techniques that selectively deposit patterned ALD films without the need for conventional top‐down lithography. To achieve this patterning, most reported AS‐ALD techniques use a chemical inhibitor layer to proactively block ALD surface reactions in selected areas. Herein, an AS‐ALD process is demonstrated that uses a focused electron beam (e‐beam) to dissociate ambient water vapor and “write” highly resolved hydroxylated patterns on the surface of highly oriented pyrolytic graphite (HOPG). The patterned hydroxylated regions then support subsequent ALD deposition. The e‐beam functionalization technique facilitates precise pattern placement through control of beam position, dwell time, and current. Spatial resolution of the technique exceeded 42 nm, with a surface selectivity of between 69.9% and 99.7%, depending on selection of background nucleation regions. This work provides a fabrication route for AS‐ALD on graphitic substrates suitable for fabrication of graphene‐based nanoelectronics.