Hydrogen interaction with Si(1 1 1) 3 x 3 -B surfaces
Hydrogen interaction with Si(1 1 1) 3 x 3 -B surfaces
复制标题
氢与 Si(1 1 1) 3 x 3 -B 表面的相互作用
DOI：
10.1016/j.apsusc.2004.06.052
复制
发表时间：
2004
期刊：
影响因子：
3.3
通讯作者：
K. Ueda
中科院分区：
文献类型：
--
作者：
M. Yoshimura;Kazutaka Watanabe;K. Ueda
用扫描隧道显微镜（STM）研究了原子氢在Si(111)3 × 3 -B表面的化学吸附。对两种表面缺陷密度不同的试样进行了检测和比较。在120朗缪尔(L)的氢照射下，在3 × 3 -B表面观察到团簇形成，缺陷密度高达50%。簇的数量随着暴露量的增加而增加，整个表面被高达500L的簇所覆盖。相比之下，即使在4000L暴露后，在低缺陷密度（约3%）的表面上也没有观察到团簇形成。这一结果表明氢腐蚀表面硅层的抑制作用，如前所述。以前的理论结果无法解释的氢反应物质在STM图像中被清晰地分辨出来。
Chemisorption of atomic hydrogen on the Si(111)3 x 3 -B surface has been studied using scanning tunneling microscopy (STM). Two kinds of specimens with different surface defect density are examined and compared. Upon hydrogen exposure of 120 Langmuir (L), cluster formation is observed on the 3 x 3 -B surface with high defect density of ∼50%. The number of clusters increases with exposure and an entire surface is covered with the clusters up to 500L. In contrast, no cluster formation is observed on the surface with low defect density of ∼3% even after exposure of 4000L. This result indicates the inhibition of hydrogen etching of the surface Si layer, as reported previously. Hydrogen-reacted species, which cannot be explained by previous theoretical results, are clearly resolved in STM images.
In/Si(111)表面酞菁分子间相关性的覆盖度依赖性
DOI：
--
发表时间：
2018
期刊：
影响因子：
--
作者：
八田振一郎;綾遥奈;奥山弘;有賀哲也
通讯作者：
有賀哲也