Cross-sectional scanning photoelectron microscopy and spectroscopy of wurtzite InN/GaN heterojunction : Measurement of intrinsic band lineup
Cross-sectional scanning photoelectron microscopy and spectroscopy of wurtzite InN/GaN heterojunction : Measurement of intrinsic band lineup
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DOI：
10.1063/1.2913204
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发表时间：
2008-04
影响因子：
4
通讯作者：
Chung-Lin Wu;Hong-Mao Lee;C. Kuo;Chia-Hao Chen;S. Gwo
中科院分区：
文献类型：
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作者：
Chung-Lin Wu;Hong-Mao Lee;C. Kuo;Chia-Hao Chen;S. Gwo
通过使用同步辐射光电子显微镜和光谱学，展示了一种研究亚微米尺度异质结能带排列的方法。特别是，这里采用原位样品解理技术来揭示沿极性-c轴在Si(111)上生长的InN∕GaN异质结的横截面、非极性a面，具有完全松弛的晶格结构，消除了与垂直于解理表面的界面电荷/偶极子相关的极化效应。已确定劈裂的 InN∕GaN 异质结处的“本征”价带偏移为 0.78eV。此外，使用已知的材料参数，还可以估计 InN∕GaN 导带偏移和 InN 电子亲和势的值。
A method for studying heterojunction band lineups on the submicrometer scale is demonstrated by using synchrotron-radiation photoelectron microscopy and spectroscopy. In particular, an in situ sample cleavage technique is adopted here to reveal the cross-sectional, nonpolar a-plane face of InN∕GaN heterojunction grown on Si(111) along the polar −c axis with fully relaxed lattice structure, eliminating the polarization effects associated with the interface charge/dipole normal to the cleaved surface. The “intrinsic” valence band offset at the cleaved InN∕GaN heterojunction has been determined to be 0.78eV. Additionally, using known material parameters, the values of InN∕GaN conduction band offset and InN electron affinity are also estimated.