Total internal reflection optical switch using the reverse breakdown of a pn junction in silicon.
Total internal reflection optical switch using the reverse breakdown of a pn junction in silicon.
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DOI：
10.1364/ol.40.004859
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发表时间：
2015-11
期刊：
影响因子：
3.6
通讯作者：
Jong-Hun Kim;HyoDerk Park
中科院分区：
文献类型：
--
作者：
Jong-Hun Kim;HyoDerk Park
我们展示了一种新型的硅全内反射光开关，它有一个简单的pn结，既可以作为反射器，也可以作为加热器。反射器被放置在具有对应于分支角度的一半的倾斜角的不对称y分支多模波导之间。当反射器静止时，由于预掺杂载流子的等离子体色散效应，入射光根据折射率差被反射。在PN结反向击穿的情况下，通过涂抹折射率差的热光效应实现到传输状态的切换。从这个开关方案中，我们确定了具有1μm宽度的浅全内反射区的开关操作。在支路角度为6°时，在151.5 mW的加热功率下，器件的消光比为12d B，插入损耗为-4.2d B。
We demonstrate a new type of silicon total-internal-reflection optical switch with a simple pn junction functioning both as a reflector and a heater. The reflector is placed between asymmetrically y-branched multimode waveguides with an inclination angle corresponding to half of the branch angle. When the reflector is at rest, incident light is reflected in accordance to the refractive index difference due to the plasma dispersion effect of the pre-doped carriers. Switching to the transmission state is attained under a reverse breakdown of the pn junction by the thermo-optic effect which smears the refractive index difference. From this switching scheme, we confirmed the switching operation with a shallow total-internal-reflection region of 1 μm width. At a 6° branch angle, an extinction ratio of 12 dB and an insertion loss of -4.2 dB are achieved along with a thermal heating power of 151.5 mW.