Preparation of Aluminum Nitride Epitaxial Films by Electron Cyclotron Resonance Dual-Ion-Beam Sputtering
Preparation of Aluminum Nitride Epitaxial Films by Electron Cyclotron Resonance Dual-Ion-Beam Sputtering
复制标题
电子回旋共振双离子束溅射制备氮化铝外延薄膜
DOI：
10.1143/jjap.33.5249
复制
发表时间：
1994
影响因子：
1.5
通讯作者：
Kenichi Shibata Kenichi Shibata
中科院分区：
文献类型：
--
作者：
N. Tanaka;H. Okano;Tatsuro Usuki Tatsuro Usuki;Kenichi Shibata Kenichi Shibata
采用电子回旋共振（ECR）双离子束溅射法在（11 μ m·2）蓝宝石衬底上沉积了氮化铝（AlN）薄膜。我们已经深入研究了AlN薄膜的结晶度和表面光滑度的辅助条件和溅射条件的依赖性。在氮离子束能量和电流密度分别为100 eV和0.32 mA/cm 2的辅助条件下，以及到达衬底表面的铝通量率（Al通量率）和氩离子束能量分别为42 Å/min和800 eV的溅射条件下沉积的AlN薄膜是表面非常光滑的单晶薄膜。为了制备外延膜，Ar离子束能量必须根据Al通量率的增加而增加，并且根据Al通量率的减小而减小。
Aluminum nitride (AlN) thin films have been deposited on (11̄·2) sapphire by an electron cyclotron resonance (ECR) dual-ion-beam sputtering method. We have thoroughly investigated the dependence of the crystallinity and surface smoothness of the AlN thin film on the assisted conditions and sputtering conditions. The AlN thin film deposited under assisted conditions with the nitrogen ion beam energy and current density of 100 eV and 0.32 mA/cm2, respectively, and sputtering conditions with the arrival aluminum flux rate to the substrate surface (Al flux rate) and argon (Ar) ion beam energy of 42 Å/min and 800 eV, respectively, is a single-crystal film with a very smooth surface. In order to prepare the epitaxial film, the Ar ion beam energy must be increased according to increases in the Al flux rate, and decreased according to decreases in the Al flux rate.