Formation of atomic-scale graded structure in Se-Te semiconductor under strong gravitational field
Formation of atomic-scale graded structure in Se-Te semiconductor under strong gravitational field
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DOI：
10.1063/1.2736334
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发表时间：
2007-06-01
影响因子：
3.2
通讯作者：
Mashimo, Tsutomu
中科院分区：
文献类型：
--
作者：
Huang, Xinsheng;Ono, Masao;Mashimo, Tsutomu
在原子尺度上的一个大的线性梯度结构高达88原子。在260 ℃下使用百万G级的强重力场在硒-碲（Se-Te）半导体中形成具有取向生长的晶体的100%/mm。Se和Te的晶格常数和3d电子的结合能随重力方向沿着连续变化，表明形成了梯度带隙结构。生长的晶体显示出六方结构的c轴大致垂直于重力方向的晶体取向。结果表明，沉积扩散系数比正常扩散系数大100倍以上，表明扩散机制与正常空位机制不同。(c)2007年美国物理研究所。
A large linearly graded structure on atomic scale up to 88 at. %/mm with oriented grown crystals was formed in selenium-tellurium (Se-Te) semiconductor using a strong gravitational field of one million G level at 260 degrees C. The lattice constants and the binding energies of Se and Te 3d electrons continuously changed along the direction of gravity accordingly, which indicated the formation of the graded band gap structure. The grown crystals showed the crystalline orientation with the c axis of hexagonal structure roughly perpendicular to the direction of gravity. It was found that the diffusion coefficient of sedimentation was larger than that of normal diffusion by more than 100 times, which suggested a different diffusion mechanism from the normal vacancy mechanism. (c) 2007 American Institute of Physics.