Annealing effects and DLTS study on PNP silicon bipolar junction transistors irradiated by 20 MeV Br ions
Annealing effects and DLTS study on PNP silicon bipolar junction transistors irradiated by 20 MeV Br ions
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20 MeV Br离子辐照PNP硅双极结晶体管的退火效应及DLTS研究
DOI：
10.1016/j.nima.2013.10.017
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
Joachim Bollmann
中科院分区：
文献类型：
--
作者：
Chaoming Liu;Xingji Li;Jianqun Yang;Joachim Bollmann
用20 MeV溴重离子辐照3CG 130硅PNP双极结晶体管（BJT），进行了等时退火。Gummel曲线被用来表征发射极-基极耗尽区和中性基极中缺陷的退火行为。结果表明，随着退火温度的升高，基区电流IB减小，而集电极电流IC保持不变。当退火温度低于500 K时，电流增益变化不大，而当退火温度高于550 K时，电流增益变化迅速，700 K退火后，电流增益几乎恢复到辐照前的水平。深能级瞬态谱（DLTS）的数据被用来分配每个重要的缺陷的相对大小。基于原位电学测量和DLTS谱，可以清楚地看出V2（+/0）陷阱是20 MeV Br离子辐照后电流增益退化的主要原因。V2（+/0）峰值具有电流增益退化所预期的许多特性。
Isochronal anneal sequences have been carried out on 3CG130 silicon PNP bipolar junction transistors (BJTs) irradiated with 20 MeV bromine (Br) heavy ions. The Gummel curve was utilized to characterize the annealing behavior of defects in both the emitter-base depletion region and the neutral base. The results show that the base current (IB) decreases with the increasing annealing temperature, while the collector current (IC) keeps invariably. The current gain varies slightly, when the annealing temperature (TA) is lower than 500 K, while varies rapidly atTA>550 K, and the current gain of the 3CG130 BJT annealing at 700 K almost restore to that of the pre-radiation transistor. The deep level transient spectroscopy (DLTS) data was used to assign the relative magnitude of each of the important defects. Based on the in situ electrical measurement and DLTS spectra, it is clear that the V2(+/0) trap is the main contribution to the degradation of current gain after the 20 MeV Br ions irradiation. The V2(+/0) peak has many characteristics expected for the current gain degradation.